rohs rohs semiconductor NKD600 series n ell semiconductors standard diodes, 600 a ( - - ) magn a pak power modules page 1 of 5 super magn a-pak features ? high surge capability ? high voltage ratings up to v 2000 ? 3000 - v isolating voltage with non toxic substrate rms ? industrial standard package ? compliant to rohs ? ul approved file e320098 applications ? rectifying bridge for large motor drives ? rectifying bridge for large ups 52 (2.05) 60.0 (2.36) (1.22) 50.0 (1.97) 44.0 (1.73) m 10 28.0 (1.10) 26.0 (0.98) 26.0 (0.98) 112.0 (4.41) 124.0 (4.88) 149.0 (5.67) 3 1 31.0 + - ~ 1 2 3 40.0 (1.89) all dimensions in millimeters (inches) 2 www.nellsemi.com
rohs rohs semiconductor n ell semiconductors page 2 of 5 product summary i f av ( ) 600 a modules diode high voltage - , type major ratings and characteristics symbol characteristics values units i f av ( ) 600 t c 100 i f rms ( ) 942 t c 100 i fsm 50 hz a 60 hz i t 2 50 hz ka 2 s 60 hz 18050 v rrm range t stg , t j range i t 2 a a c c c v - 40 150 to 800 2000 to 1683 1805 20100 19000 ka t 2 voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , - maximum non repetitive peak reverse voltage v i rrm maximum at t j maximum ma NKD600 08 800 900 50 12 1200 1300 16 1600 1700 20 2000 2100 forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f av ( ) 600 100 maximum rms forward current l f rms ( ) maximum peak one cycle forward , - , non repetitive surge current - i fsm t ms = 10 no voltage reapplied sinusoidal half wave, initial t j j = t maximum 19.0 ka t ms = 8.3 t ms = 10 1805 ka 2 s t ms = 8.3 t ms = 10 100 % v rrm reapplied 1319 t ms = 8.3 maximum i t for fusing 2 maximum forward voltage drop 1230 1683 i t 2 v 1.45 ka t 2 18050 i t 2 v fm t = 0.1ms to 10 ms, no voltage reapplied 20.1 a 942 a NKD600 series l = 1000a, t = 25 c, t = 10 ms sine pulse pk j p 180 conduction, half sine wave at t = 100 c c 180 conduction, half sine wave maximum i t for fusing 2 www.nellsemi.com c
rohs rohs semiconductor n ell semiconductors page 3 of 5 blocking parameter symbol test conditions values units rms insulation voltage v ins t s = 1 maximum peak reverse and off state leakage current - i rrm a 50 thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating and storage temperature range - 40 150 to maximum thermal resistance, junction to ca se per junction dc operation k w / maximum thermal resistance, case to heatsink 0.02 mounting torque 10 % smap to heatsink a mounting compound is recommended and the torque should be rechecked after a period of hours to allow 3 for the spread of the compound. 6 8 to nm busbar to smap 12 to 15 approximate weight g case style see dimensions link at the end of datashet - 0.065 1500 super magn-a-pak r conduction thjc conduction angle 180 0.006 0.011 0.015 sinusoidal conduction rectangular conduction test conditions units 120 90 60 30 0.009 0.011 0.014 0.021 0.037 0.022 0.038 t = t maximum j j k/w note the table above shows the increment of thermal resistance r when devices o perate at different conduction angles than dc thjc . 1 fig current ratings characteristics 80 90 100 110 120 130 140 150 0 100 200 300 400 500 600 7 00 30 60 90 120 180 maximum allowable case temperature c ( ) conduction angle average forward current a ( ) . 2 fig current ratings characteristics 80 90 100 110 120 130 140 150 0 200 400 600 800 10 00 dc 30 60 90 120 180 maximum allowable case temperature c ( ) conduction period average forward current a ( ) NKD600 series t = t maximum, rated v applied j j rrm t = 25 c j 3000 50 v ma t , t j stg r thjc r c th -hs r (dc)= 0.065 k/w thjc r (dc)= 0.065 k/w thjc www.nellsemi.com c
. 3 fig forward power loss characteristics . 4 fig forward power loss characteristics 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 average forward current a ( ) rms limit maximum average forward power loss w ( ) conduction angle 180 120 90 60 30 per junction t = 150 c j 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 10 00 dc 180 120 90 60 30 average forward current a ( ) rms limit maximum average forward power loss w ( ) conduction period per junction . 7 fig forward power loss characteristics 4000 6000 8000 10000 12000 14000 16000 18000 1 1 0 1 0 0 peak half sine wave forward current a ( ) number of equal amplitude half cycle current pulses n ( ) per junction @ 60 0.0083 s hz @ 50 0.0100 s hz . 4000 6000 8000 10000 12000 14000 16000 18000 20000 0.01 0.1 1 peak half sine wave forward current a ( ) pulse train duration s ( ) per junction 0 25 50 75 100 125 150 maximum allowable ambient temperature c ( ) r = 0 . 0 2 k / w - d e l t a r th s a 0 . 0 4 k / w 0. 06 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0. 16 k / w 0 . 2 5 k / w 0 . 3 5 k / w 0 . 5 k / w 0 200 400 600 800 1000 0 200 400 600 800 1000 total rms output current a ( ) maximum total forward power loss w ( ) vskd series 600.. per junction 180 ( ) sine dc rohs rohs semiconductor n ell semiconductors NKD600 series page 4 of 5 t = 150 c j at any rated load condition and with rated v reapplied following surge. rrm lnitial t = 150 c j fig.5 maximum non-repetitive surge current fig.6 maximum non-rep etitive surge current maximum non repetitive surge current versus pulse train duration lnitial t = 150 c j no voltage reapplied rated v reapplied rrm lnitial t = 150 c j www.nellsemi.com
fig.8 forward power loss characteristics 0 25 50 75 100 125 150 maximum allowable ambient temperature c ( ) r = 0 . 0 1 k / w - d e l t a r t h s a 0 . 0 2 k / w 0 .0 3 k / w 0 . 0 4 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 500 1000 1500 2000 2500 3000 0 200 400 600 800 1000 1200 total output current a ( ) maximum total power loss w ( ) 180 ( ) sine 180 ( ) rect 2 600.. x nkd series single phase bridge connected . 9 fig forward power loss characteristics 0 25 50 75 100 125 150 maximum allowable ambient temperature c ( ) r = 0 . 0 1 k / w - d e l t a r 0 . 0 2 k / w 0 . 0 3 k / w 0 . 0 5 k / w 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w t h s a 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 300 600 900 1200 1500 1800 total output current a ( ) maximum total power loss w ( ) 120 ( ) rect 3 600.. x nkd series three phase bridge connected 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 square wave pulse duration s ( ) thjc transient thermal impedance z k w ) ( / per junction steady state value : r k w = 0.065 / ( ) dc operation thjc rohs rohs semiconductor n ell semiconductors NKD600 series page 5 of 5 t = 150 c j t = 150 c j fig.10 thermal lmpedance z characteristic thjc www.nellsemi.com
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